Heavily Si‐doped GaAs grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341253
Reference17 articles.
1. Tin Doping of Gallium Arsenide by Metal Organic Chemical Vapor Deposition (MOCVD)
2. A New Method for Growing GaAs Epilayers by Low Pressure Organometallics
3. H2Se “memory effects” upon doping profiles in GaAs grown by metalorganic chemical vapor deposition (MO-CVD)
4. Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine method
5. The pyrolysis of monosilane
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