Properties of InGaAs epitaxial layers lattice matched to InGaAs single crystal substrates-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Properties of InGaAs epitaxial layers lattice matched to InGaAs single crystal substrates

Published:1991-09 Issue:3-4 Volume:113 Page:379-384
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Roth A.P.,Wasilewski Z.,Sun Q.,Lacelle C.,Bryskiewicz T.,Coulas D.,Noad J.P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. GaInAsP Alloy Semiconductors,1982

2. Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETs

3. Strained-layer InGaAs-GaAs-AlGaAs photopumped and current injection lasers

4. Properties of very uniform InxGa1−xAs single crystals grown by liquid‐phase electroepitaxy

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates;Journal of Applied Physics;1997-10

2. Improved pseudomorphic high electron mobility transistor structures on InGaAs substrates;Journal of Applied Physics;1997-01-15

3. A continuum model for liquid phase electroepitaxy;International Journal of Engineering Science;1995-08

4. Liquid phase electroepitaxy of III–V semiconductors;Journal of Crystal Growth;1995-01

5. Growth of alloy substrates by liquid phase electroepitaxy; Theoretical considerations;Journal of Crystal Growth;1993-04

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP