AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates-Reference-Cited by-同舟云学术

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AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

Published:1997-10 Issue:7 Volume:82 Page:3576-3580
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hoke W. E.,Lyman P. S.,Mosca J. J.,McTaggart R. A.,Lemonias P. J.,Beaudoin R. M.,Torabi A.,Bonner W. A.,Lent B.,Chou L.-J.,Hsieh K. C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.365676

Reference14 articles.

1. An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT

2. High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

3. Room‐temperature blue lasing action in (Zn,Cd)Se/ZnSe optically pumped multiple quantum well structures on lattice‐matched (Ga,In)As substrates

4. Properties of InGaAs epitaxial layers lattice matched to InGaAs single crystal substrates

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system;Solid-State Electronics;2015-12

2. Microwave Performance of Double $\delta$-Doped High Electron Mobility Transistor With Various Lower/Upper Planar-Doped Ratio Designs;IEEE Transactions on Electron Devices;2008-01

3. Influence of Silicon Nitride Passivation on DC and RF Characteristics of 0.1 μm Pseudomorphic HEMTs;Journal of The Electrochemical Society;2005

4. Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999

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