Microwave Performance of Double $\delta$-Doped High Electron Mobility Transistor With Various Lower/Upper Planar-Doped Ratio Designs-Reference-Cited by-同舟云学术

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Microwave Performance of Double $\delta$-Doped High Electron Mobility Transistor With Various Lower/Upper Planar-Doped Ratio Designs

Published:2008-01 Issue:1 Volume:55 Page:256-260
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chiu Hsien-Chin,Chen Chung-Wen,Huang Yuan-Chang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4408767/04399661.pdf?arnumber=4399661

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Prospects of III–V Semiconductor-Based High Electron Mobility Transistors (HEMTs) Towards Emerging Applications;Lecture Notes in Electrical Engineering;2023-09-03

2. Study of the influence of the sulfide and ultraviolet treatment of the n-i-GaAs surface on the parameters of ohmic contacts;Semiconductors;2011-08

3. An X-band ultra-low phase noise differential Colpitts voltage-controlled oscillator using 0.15 μm pseudomorphic high electron mobility transistor technology;International Journal of Electronics;2010-05

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