Study of the influence of the sulfide and ultraviolet treatment of the n-i-GaAs surface on the parameters of ohmic contacts-Reference-Cited by-同舟云学术

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Study of the influence of the sulfide and ultraviolet treatment of the n-i-GaAs surface on the parameters of ohmic contacts

Published:2011-08 Issue:8 Volume:45 Page:1026-1031
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Avdeev S. M.,Erofeev E. V.,Kagadei V. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782611080033.pdf

Reference24 articles.

1. V. N. Bessolov and M. V. Lebedev, Fiz. Tekh. Poluprovodn. 32, 11 (1998).

2. C. J. Sandroff, M. S. Hegde, L. A. Farrow, C. C. Chang, and J. P. Harbinson, Appl. Phys. Lett. 54, 362 (1989).

3. H.-C. Chiu, Y.-C. Huang, L.-B. Chang, and F.-T. Chein, Semicond. Sci. Technol. 23, 11 (2008).

4. H.-C. Chiu, IEEE Trans. Electron. Dev. 55, 3 (2008).

5. H.-C. Chiu, Y.-C. Huang, L.-B. Chang, and F.-T. Chien, Semicond. Sci. Technol. 23, 3 (2008).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Transition Processes in Microelectronic Ag-Ge-In/n-GaAs Compositions;Journal of Nano- and Electronic Physics;2017

2. Thermal and chemical passivation of gallium-arsenide films deposited from ablation plasma;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2014-01

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