Surface segregation of indium during growth of InGaAs in chemical beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference4 articles.
1. Rheed and x-ray characterization of InGaAs/GaAs grown by MBE
2. Ion Beam Analysis of Molecular Beam Epitaxy InAlAs / InGaAs Layer Structures
3. Realization of bothp‐ andn‐type conduction for ZnSe‐ZnTe strained‐layer superlattices
4. Surface segregation model for Sn‐doped GaAs grown by molecular beam epitaxy
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1. Hybrid epitaxy technique for the growth of high-quality AlInAs and GaInAs layers on InP substrates;Journal of Vacuum Science & Technology B;2019-05
2. Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications;Quantum Sensing and Nanophotonic Devices X;2013-02-04
3. Electronic, optical, and structural properties of (In,Ga)As/GaP quantum dots;Physical Review B;2012-11-19
4. Study of surface roughness using spectral reflectance measurements recorded during the MOVPE of InAs/GaAs heterostructures;Physica E: Low-dimensional Systems and Nanostructures;2012-04
5. Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement;Japanese Journal of Applied Physics;2011-01-20
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