Photoluminescence investigation on growth mode changeover of Ge on Si(100)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure
2. Physics and applications of GexSi1-x/Si strained-layer heterostructures
3. Strain relaxation during the initial stages of growth in Ge/Si(001)
4. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
5. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
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