Te doping effects on the ferromagnetic performance of the MnGe/Si quantum dots grown by ion beam sputtering deposition-Reference-Cited by-同舟云学术

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Te doping effects on the ferromagnetic performance of the MnGe/Si quantum dots grown by ion beam sputtering deposition

Published:2023-12 Issue: Volume:968 Page:172047
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Duan Xiaoxiao,Chen Xuemei,Wu Dingzhang,Lu Chunjiang,He Xinpeng,Ye Shuming,Lin Feng,Wang Rongfei,Wang Chong^ORCID

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference65 articles.

1. Ni-doped SnO2 dilute magnetic semiconductors: morphological characteristics and optical and magnetic properties;Jiang;J. Supercond. Nov. Magn.,2020

2. A ten-year perspective on dilute magnetic semiconductors and oxides;Dietl;Nat. Mater.,2010

3. Transition metals doped (3,3) armchair boron nitride nanosheet as dilute magnetic semiconductors materials for the spintronic application;Malek;Int. J. Quantum Chem.,2023

4. Formation and magnetic interaction of Si/MnGe core/shell nanowire arrays;Aykac;J. Supercond. Nov. Magn.,2020

5. Thin film MnGe grown on Si(111);Engelke;J. Phys. -Condens Mat.,2013

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microstructure and Ferromagnetism of Mn_0.05Ge_0.95 Quantum Dots/Graphene Heterostructures for Spintronic Devices;ACS Applied Nano Materials;2024-07-17

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