Self-organized MBE growth of Ge-rich SiGe dots on Si(100)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Optical properties of Si/Si0.87Ge0.13multiple quantum well wires
2. Optical anisotropy in wire‐geometry SiGe layers grown by gas‐source selective epitaxial growth technique
3. SiGe quantum wells on (110) Si grown by molecular beam epitaxy
4. Photoluminescence and electroluminescence of SiGe dots fabricated by island growth
5. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
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1. Improved rectification and transport properties of hybrid PEDOT:PSS/Ge/Si heterojunctions with Ge nanoclusters;Journal of Applied Physics;2020-08-28
2. Superior optical (λ ∼ 1550 nm) emission and detection characteristics of Ge microdisks grown on virtual Si0.5Ge0.5/Si substrates using molecular beam epitaxy;Nanotechnology;2019-12-23
3. Impact of size distributions of Ge islands as etching masks for anisotropic etching on formation of anti-reflection structures;Japanese Journal of Applied Physics;2019-03-26
4. Assessing Carrier Recombination Processes in Type‐II SiGe/Si(001) Quantum Dots;Annalen der Physik;2019-01-11
5. Fabrication of light-trapping structure by selective etching of thin Si substrates masked with a Ge dot layer and nanomasks;Japanese Journal of Applied Physics;2018-07-20
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