Improved rectification and transport properties of hybrid PEDOT:PSS/Ge/Si heterojunctions with Ge nanoclusters-Reference-Cited by-同舟云学术

Improved rectification and transport properties of hybrid PEDOT:PSS/Ge/Si heterojunctions with Ge nanoclusters

Published:2020-08-28 Issue:8 Volume:128 Page:085503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kondratenko S. V.¹^ORCID,Lysenko V. S.²,Gomeniuk Yu. V.²^ORCID,Kondratenko O. S.²,Kozyrev Yu. N.³,Selyshchev O. V.⁴,Dzhagan V. M.¹²^ORCID,Zahn D. R. T.⁴

Affiliation:

1. Faculty of Physics, Taras Shevchenko National University of Kyiv, 64 Volodymyrs’ka St., 01601 Kyiv, Ukraine

2. V. E. Lashkaryov Institute of Semiconductors Physics, NAS of Ukraine, 41 pr. Nauki, 03028 Kyiv, Ukraine

3. O.O. Chuiko Institute of Surface Chemistry, 17 Generala Naumova St., 03164 Kyiv, Ukraine

4. Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany

Funder

Deutscher Akademischer Austauschdienst

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0016422

Reference43 articles.

1. An array of SiGe nanodisks with Ge quantum dots on bulk Si substrates demonstrating a unique light–matter interaction associated with dual coupling

2. Photovoltage spectroscopy of direct and indirect bandgaps of strained Ge1-Sn thin films on a Ge/Si(001) substrate

3. Self-organized MBE growth of Ge-rich SiGe dots on Si(100)

4. Chemical vapor deposition of Ge nanocrystals on SiO2

5. Growth of Ge islands and nanocrystals using RF magnetron sputtering and their characterization

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