Roughening of SiGe layers grown with gas-source MBE: dependence on Ge concentration and growth temperature
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
2. Surfactants in epitaxial growth
3. Selective growth condition in disilane gas source silicon molecular beam epitaxy
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5. Investigation of luminescence in strained SiGe/Si modulated quantum well and wire structures
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low-temperature growth properties of Si1−xGex by disilane and solid-Ge molecular beam epitaxy;Journal of Crystal Growth;1998-10
2. Growth and dislocation distribution of single Si1-xGex/Si(001) epilayer structures grown by gas source molecular beam epitaxy;Metals and Materials;1998-09
3. Ge composition saturation behavior during low-temperature Si1 − xGex growth by disilane and solid Ge molecular beam epitaxy;Journal of Crystal Growth;1997-11
4. Kinetic critical thickness for surface wave instability vs. misfit dislocation formation in GexSi1−x/Si (100) heterostructures;Physica A: Statistical Mechanics and its Applications;1997-05
5. Gas source MBE growth of device materials;Journal of Crystal Growth;1996-07
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