Gas source MBE growth of device materials-Reference-Cited by-同舟云学术

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Gas source MBE growth of device materials

Published:1996-07 Issue:1-4 Volume:164 Page:223-234
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Werner K.,Storm A.,Butzke S.,Maes J.W.,van Rooy M.,Alkemade P.,Algra E.,Somers M.,de Lange B.,van der Drift E.,Zijlstra T.,Radelaar S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference59 articles.

1. Structure, properties and applications of GexSi1-xstrained layers and superlattices

2. High-performance Si/SiGe heterojunction bipolar transistors grown by molecular-beam epitaxy

3. Avalanche gain in GexSi1-x/Si infrared waveguide detectors

4. Growth anisotropy observed on Si(001) surfaces during Si-GSMBE using disilane

5. Growth dynamics studied by RHEED during epitaxy from gaseous hydrides

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In situ doping control for growth of n–p–n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy;Journal of Crystal Growth;2005-01

2. Dynamic transition in deposition with a poisoning species;Physical Review E;2002-08-06

3. Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy;Journal of Crystal Growth;2001-03

4. Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy;Journal of Crystal Growth;2000-12

5. The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy;Journal of Crystal Growth;2000-12

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