Growth dynamics studied by RHEED during epitaxy from gaseous hydrides
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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1. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
2. Enhancement mode n-channel Si/SiGe MODFET with high intrinsic transconductance
3. Avalanche gain in GexSi1-x/Si infrared waveguide detectors
4. Theoretical calculations of heterojunction discontinuities in the Si/Ge system
5. Electronic structure of Ge/Si monolayer strained-layer superlattices
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