Optical properties of high-quality InAlAs/InGaAs SQWs grown by MBE using specially refined In and Al sources
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy
2. Extremely high-quality GaInAs/AlInAs single quantum wells grown by molecular beam epitaxy
3. Reduction of fast interface states and suppression of drift phenomena in arsenic‐stabilized metal‐insulator‐InP structures
4. Proc. 12th Intern. Symp. on GaAs and Related Compounds;Mishima,1986
5. Low temperature MBE growth of high quality AlGaAs
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Abnormal broadening of the optical transitions in (Ga,As)N/GaAs quantum wells;Physical Review B;2012-01-10
2. Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy;Journal of Electronic Materials;1998-09
3. Molecular beam epitaxy of heterostructures on metamorphic AlxGayIn1 − x − yAs buffer layers;Journal of Crystal Growth;1997-05
4. Growth of high quality Al0.48In0.52As/Ga0.47In 0.53As heterostructures using strain relaxed AlxGayIn1−x−yAs buffer layers on GaAs;Applied Physics Letters;1996-07-15
5. Accurate control of As and Sb incorporation ratio during solid-source molecular-beam epitaxy;Journal of Crystal Growth;1995-05
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3