Accurate control of As and Sb incorporation ratio during solid-source molecular-beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Molecular Beam Epitaxy of GaP and GaAs1-xPx
2. Composition effects in the growth of Ga(In)AsyP1-y alloys by MBE
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4. Molecular beam epitaxial growth of InGaAsSb on (100) GaSb with emission wavelength in the 2 to 2.5 μm range
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