Molecular beam epitaxy of heterostructures on metamorphic AlxGayIn1 − x − yAs buffer layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Process technology for InGaAs/InAlAs modulation doped field effect transistors on InP substrates
2. Principle differences between the transport properties of normal AlGaAs/InGaAs/GaAs and inverted GaAs/InGaAs/AlGaAs modulation doped heterostructures
3. In0.5Ga0.5As/InAlAs Modulation-doped Field Effect Transistors on GaAs Substrates Grown by Low-Temperature Molecular Beam Epitaxy
4. Modulation-doped In0.3Ga0.7As/In0.29Al0.71As heterostructures grown on GaAs by step grading
5. 1.3 μm Exciton resonances in InGaAs quantum wells grown by molecular beam epitaxy using a slowly graded buffer layer
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1. Step-graded InAsP buffer layers with gradient interface grown via metal organic chemical vapor deposition;SN Applied Sciences;2019-05-17
2. Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities;Applied Surface Science;2015-12
3. Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness;Applied Surface Science;2015-01
4. Low-Temperature and Metamorphic Buffer Layers;Handbook of Crystal Growth;2015
5. Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer;Journal of Crystal Growth;2013-03
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