1.3 μm Exciton resonances in InGaAs quantum wells grown by molecular beam epitaxy using a slowly graded buffer layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. The effect of reduced growth area by substrate patterning on misfit accommodation in molecular beam epitaxially grown InxGa1−xAs/GaAs
2. Molecular beam epitaxial growth and properties of highly strained InxGa1−xAs/GaAs multiple quantum wells
3. Device quality In0.4Ga0.6As grown on GaAs by molecular beam epitaxy
4. InxGa1−xAs/GaAs multiple quantum well optical modulators for the 1.02–1.07 μm wavelength range
5. Novel reflectance modulator employing an InGaAs/AlGaAs strained‐layer superlattice Fabry–Perot cavity with unstrained InGaAs/InAlAs mirrors
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1. Temperature dependence of threading dislocation density in In0.2Ga0.8As layers grown on GaAs substrates by metalorganic-vapor phase epitaxy;Journal of Crystal Growth;2005-08
2. Room-temperature yellow–amber emission from InGaP quantum wells grown on an InGaP metamorphic buffer layer on GaP(100) substrates;Journal of Crystal Growth;2005-05
3. Optical and structural prorerties of InAs epilayer on graded InGaAs;MRS Proceedings;2001
4. Effect of in situ annealing on highly-mismatched In0.75Ga0.25As on InP grown using molecular beam epitaxy;Journal of Electronic Materials;1999-07
5. Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs;Materials Science and Technology;1998-12
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