Growth of high quality Al0.48In0.52As/Ga0.47In 0.53As heterostructures using strain relaxed AlxGayIn1−x−yAs buffer layers on GaAs-Reference-Cited by-同舟云学术

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Growth of high quality Al0.48In0.52As/Ga0.47In 0.53As heterostructures using strain relaxed AlxGayIn1−x−yAs buffer layers on GaAs

Published:1996-07-15 Issue:3 Volume:69 Page:412-414
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Haupt M.,Köhler K.,Ganser P.,Emminger S.,Müller S.,Rothemund W.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.118078

Reference9 articles.

Cited by 45 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. 4 Surface and Chemical Considerations in Heteroepitaxy;Heteroepitaxy of Semiconductors;2016-09-15

3. Effects of continuously graded or step-graded In Al1−As buffer on the performance of InP-based In0.83Ga0.17As photodetectors;Journal of Crystal Growth;2015-09

4. Strain-relaxed buffer technology based on metamorphic InxAl1-xAs;Journal of Crystal Growth;2015-08

5. Comparison of the phase-invariant and mosaic crystal models for dynamical x-ray diffraction from metamorphic InxGa1−xAs/GaAs (001) structures;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-03

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