Selective growth of p+-GaAs by metalorganic molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference4 articles.
1. Metallic p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy
2. Selective growth of GaAs in the MOMBE and MOCVD systems
3. High purity GaAs and AlxGa1-xAs grown by metalorganic molecular beam epitaxy
4. Selective epitaxial growth of gallium arsenide by molecular beam epitaxy
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Performance of a p-channel heterojunction fet with p+-GaAs selectively grown contact layers for GaAs complementary ICs;Solid-State Electronics;1998-06
2. 0.1-μm p/sup +/-GaAs gate HJFET's fabricated using two-step dry-etching and selective MOMBE growth techniques;IEEE Transactions on Electron Devices;1998-06
3. Selective-area metalorganic molecular beam epitaxy of GaAs using metalorganic chloride gallium precursors;Journal of Crystal Growth;1997-12
4. High-f/sub max/ AlGaAs/InGaAs and AlGaAs/GaAs HBT's with p/sup +//p regrown base contacts;IEEE Transactions on Electron Devices;1995
5. Quasi-planar GaAs heterojunction bipolar transistor device entirely grown by chemical beam epitaxy;Journal of Crystal Growth;1994-03
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