Quasi-planar GaAs heterojunction bipolar transistor device entirely grown by chemical beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Very high gain in carbon-doped base heterojunction bipolar transistor grown by chemical beam epitaxy
2. Ohmic contacts to n‐GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy
3. Gallium Arsenide and Related Compounds 1992;Shimawaki,1993
4. CBE selective embedded growth for quasi-planar GaAs HBT application
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1. Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE;Journal of Electronic Materials;2000-02
2. Selective area epitaxy of GaAs using tri-isopropylgallium;Journal of Electronic Materials;1998-05
3. High stability heterojunction bipolar transistors with carbon-doped base grown by atomic layer chemical beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-11
4. Benefits of chemical beam epitaxy for micro and optoelectronic applications;Progress in Crystal Growth and Characterization of Materials;1996-01
5. Improved stability of C-doped GaAs grown by chemical beam epitaxy for heterojunction bipolar transistor applications;Journal of Crystal Growth;1996-01
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