Performance of a p-channel heterojunction fet with p+-GaAs selectively grown contact layers for GaAs complementary ICs
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Published:1998-06
Issue:6
Volume:42
Page:1049-1055
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ISSN:0038-1101
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Container-title:Solid-State Electronics
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language:en
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Short-container-title:Solid-State Electronics
Author:
Furuhata Naoki,Fujii Masahiro,Asai Shuji,Maeda Tadashi,Ohno Yasuo
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Abrokwah, J. K., Huang, J. H., Ooms, W., Shurboff, C., Hallmark, J. A., Lucero, R., Gillbert, J., Bernhardt, B. and Hansell, G., GaAs IC Symp. Dig., 1993, p. 127 2. Hallmark, J. A., Shurboff, C., Ooms, B., Lucero, R., Abrokwah, J. K. and Huang, J. H., GaAs IC Symp. Dig., 1994, p. 55 3. Bernhardt, B., LaMacchia, M., Abrokwah, J., Hallmark, J., Lucero, R., Mathes, B., Crawforth, B., Foster, D., Clauss, K., Emmert, S., Lien, T., Lopez, E., Mazzotta, V. and Oh, B., GaAs IC Symp. Dig., 1995, p. 18 4. Complementary heterostructure FET technology for low power, high speed digital applications 5. 0.3-μm gate length p-channel AlGaAs/InGaAs heterostructure field effect transistors with high cut-off frequency
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