Undoped high mobility two-dimensional hole-channel GaAs∕AlxGa1−xAs heterostructure field-effect transistors with atomic-layer-deposited dielectric
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2714094
Reference15 articles.
1. Technical Digest of the 25th Annual IEEE GaAs IC Symposium;Eden R. C.,2003
2. Variable density high mobility two‐dimensional electron and hole gases in a gated GaAs/AlxGa1−xAs heterostructure
3. High mobility GaAs heterostructure field effect transistor for nanofabrication in which dopant‐induced disorder is eliminated
4. Self-aligned p-channel MISFET with a low-temperature-grown GaAs gate insulator
5. Performance of a p-channel heterojunction fet with p+-GaAs selectively grown contact layers for GaAs complementary ICs
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