A manufacturable complementary GaAs process-Reference-Cited by-同舟云学术

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A manufacturable complementary GaAs process

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Container-title:15th Annual GaAs IC Symposium
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Author:

Abrokwah J.K.,Huang J.H.,Ooms W.,Shurboff C.,Hallmark J.A.,Lucero R.,Gilbert J.,Bernhards B.,Hansell G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx2/3147/8957/00394486.pdf?arnumber=394486

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of the delta-doped layer in P-HFETs at medium/high temperatures;Semiconductor Science and Technology;2000-04-01

2. Tunneling-based SRAM;Proceedings of the IEEE;1999-04

3. Tunnelling-based SRAM;Nanotechnology;1999-01-01

4. Compound Semiconductor Device Processing;Compound Semiconductor Devices;1998-10-15

5. Performance of a p-channel heterojunction fet with p+-GaAs selectively grown contact layers for GaAs complementary ICs;Solid-State Electronics;1998-06

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