Selective area growth of InGaAsP/InP waveguide modulator structures by chemical beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Selective area growth of gallium arsenide by metalorganic vapor phase epitaxy
2. Selective growth of InP/GaInAs in LP-MOVPE and MOMBE/CBE
3. Selective area growth of InP/InGaAs multiple quantum well laser structures by metalorganic molecular beam epitaxy
4. Selective area epitaxy and growth over patterned substrates by chemical beam epitaxy
5. Selective Area Growth of InP and InGaAs Layers on SiO2-Masked Substrate by Chemical Beam Epitaxy
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1. Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Template;Advanced Materials Technologies;2023-04-14
2. Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows;Nanomaterials;2020-12-23
3. Combining selective area growth and self-organized strain engineering for site-controlled local InAs/InP quantum dot arrays;Journal of Crystal Growth;2011-11
4. Butt-coupling loss of 0.1 dB/interface in InP/InGaAs multiple-quantum-well waveguide-waveguide structures grown by selective area chemical beam epitaxy;Semiconductor Science and Technology;1998-08-01
5. Butt-coupling loss of 0.1dB/interface in InP/InGaAs MQW waveguide-waveguide structures grown by selective area chemical beam epitaxy;Journal of Crystal Growth;1998-06
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