Selective Area Growth of InP and InGaAs Layers on SiO2-Masked Substrate by Chemical Beam Epitaxy-Reference-Cited by-同舟云学术

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Selective Area Growth of InP and InGaAs Layers on SiO2-Masked Substrate by Chemical Beam Epitaxy

Published:1991-06-15 Issue:Part 2, No. 6B Volume:30 Page:L1089-L1091
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sugiura Hideo,Iga Ryuzo,Yamada Takeshi,Toriyama Tsuyoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular Beam Epitaxy with Gaseous Sources;Handbook of Crystal Growth;2015

2. Selective area growth of InP and GaAs by chemical beam epitaxy using a novel temperature control: effects of growth conditions and pattern directions;Journal of Crystal Growth;2002-02

3. Selective Growth Techniques and Their Application in WDM Device Fabrication;WDM Technologies;2002

4. Benefits of chemical beam epitaxy for micro and optoelectronic applications;Progress in Crystal Growth and Characterization of Materials;1996-01

5. The III-V Materials for Infra-Red Devices;Materials for Optoelectronics;1996

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