Uniform MBE growth of 2 inch diameter wafer for GaAs/AlGaAs and InGaAs/AlGaAs quantum well lasers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. MBE as a production technology for HEMT LSIs
2. Very high-power (425 mW) AlGaAs SQW-GRINSCH ridge laser with frequency-doubled output (41 mW at 428 nm)
3. MBE as a production technology for AlGaAs lasers
4. Role of substrate temperature in molecular‐beam epitaxial growth of high‐power GaAs/AlGaAs lasers
5. Molecular beam epitaxy of gallium arsenide using direct radiative substrate heating
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1. Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots;Chinese Physics B;2016-09-23
2. A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to surface emitting laser diodes;Solid State Communications;2010-10
3. Uniform growth of high-quality 2-in diameter In0.53Ga0.47As/In0.52Al0.48As/InP and In0.2Ga0.8As/GaAs/AlGaAs multi-quantum well wafers by MBE with GaP and GaAs decomposition sources;Journal of Crystal Growth;2002-04
4. Weakly Index Guided Buried-Stripe Type 980 nm Laser Diodes Grown by a Combination of Gas Source Molecular Beam Epitaxy and Metalorganic Vapor Phase Epitaxy with an AlGaAs/InGaP/GaAs Double Etch Stop Structure;Japanese Journal of Applied Physics;1999-10-15
5. Influence of cap layer thickness on optical quality in In0.2Ga0.8As/GaAs single quantum wells;Applied Physics Letters;1994-07-18
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