Ge+ ion implantation — a competing technology?-Reference-Cited by-同舟云学术

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Ge+ ion implantation — a competing technology?

Published:1995-12 Issue:1-4 Volume:157 Page:147-160
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hemment P.L.F.,Cristiano F.,Nejim A.,Lombardo S.,Larssen K.K.,Priolo F.,Barklie R.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference44 articles.

1. SiGe: Promise into reality?

2. TRIM '91.

3. Ion Implantation Science and Technology,1994

4. Precipitation and relaxation in strained Si1−yCy/Si heterostructures

5. Hall mobility of positive carriers in the semimetallic compound LiGa

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1. Epitaxial Ge-rich silicon layers after dry oxidation of Ge implanted silicon;Vacuum;2019-02

2. Fabrication of composite based on GeSi with Ag nanoparticles using ion implantation;Technical Physics;2016-12

3. SiGe Synthesis by Ge Ion Implantation;Japanese Journal of Applied Physics;2012-09-20

4. SiGe Synthesis by Ge Ion Implantation;Japanese Journal of Applied Physics;2012-09-01

5. Electrical properties of metal-oxide-semiconductor structures with low-energy Ge-implanted and annealed thin gate oxides;Journal of Applied Physics;2008-03-15

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