Interface optimization of multiple quantum wells grown by gas source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Gas source molecular beam epitaxial growth and device applications in In0.5Ga0.5P and In0.5Al0.5P heterostructures
2. Interface properties for GaAs/InGaAlP heterojunctions by the capacitance‐voltage profiling technique
3. Plasma and wet chemical etching of In0.5Ga0.5P
4. Wet and dry etching characteristics of Al0.5In0.5P
5. Novel GaAs heterojunction bipolar transistors using In/sub 0.5/Al/sub 0.5/P as emitter
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1. Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies;Applied Surface Science;2016-01
2. (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/In/sub 0.15/Ga/sub 0.85/As (x=0, 0. 3, 1. 0) heterostructure doped-channel FETs for microwave power applications;IEEE Transactions on Electron Devices;2001
3. Interface quality and electron transfer at the GaInP on GaAs heterojunction;Journal of Applied Physics;1998-07-15
4. Optimization of the aluminum composition in In[sub 0.5](Al[sub x]Ga[sub 1−x])[sub 0.5]P/In[sub 0.2]Ga[sub 0.8]As high electron mobility transistors for power applications;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05
5. Determination of the Band Offset of GalnP- GaAs and AllnP- GaAs Quantum Wells by Optical Spectroscopy;Journal of Electronic Materials;1997-08
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