Optimization of the aluminum composition in In[sub 0.5](Al[sub x]Ga[sub 1−x])[sub 0.5]P/In[sub 0.2]Ga[sub 0.8]As high electron mobility transistors for power applications
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Published:1998-05
Issue:3
Volume:16
Page:1404
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering