250 Å spacer GaAs-AlGaAs two-dimensional electron gas (2DEG) structures with mobilities in excess of 3 × 106 cm2 V-1 s-1 at 4 K-Reference-Cited by-同舟云学术

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250 Å spacer GaAs-AlGaAs two-dimensional electron gas (2DEG) structures with mobilities in excess of 3 × 106 cm2 V-1 s-1 at 4 K

Published:1993-02 Issue:1-4 Volume:127 Page:793-797
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Holland M.C.,Kean A.H.,Stanley C.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference4 articles.

1. Peak electron mobilities between 2.75 and 3.32×105cm2 V−1 s−1in GaAs grown by molecular beam epitaxy with As2

2. GaAs structures with electron mobility of 5×106cm2/V s

3. Investigation of the interface quality of heterostructures

4. Gallium desorption from (Al,Ga)As grown by molecular beam epitaxy at high temperatures

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1. Proposal for electron quantum spin Talbot effect;Physical Review B;2012-02-27

2. Light up‐conversion effect in ZnSe‐ZnTe superlattices grown on ZnSe by MBE;physica status solidi (c);2004-03

3. Characteristics of Gated GaAs/Al0.3Ga0.7As Heterostructures;physica status solidi (a);2001-10

4. Growth and characterization of high mobility two-dimensional electron gases;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-05

5. Electron transport in shallow heterostructures with AlGaAs and AlAs barriers;Semiconductor Science and Technology;1995-07-01

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