Peak electron mobilities between 2.75 and 3.32×105cm2 V−1 s−1in GaAs grown by molecular beam epitaxy with As2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103988
Reference18 articles.
1. A correlation between electron traps and growth processes inn‐GaAs prepared by molecular beam epitaxy
2. Growth of Al0.3Ga0.7As by molecular beam epitaxy in the forbidden temperature range using As2
3. Reduced carbon acceptor incorporation in GaAs grown by molecular beam epitaxy using dimer arsenic
4. On residual carbon acceptors in molecular‐beam epitaxial GaAs
5. Effect of arsenic source on the growth of high‐purity GaAs by molecular beam epitaxy
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