On residual carbon acceptors in molecular‐beam epitaxial GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342750
Reference10 articles.
1. Effect of arsenic source on the growth of high‐purity GaAs by molecular beam epitaxy
2. Reduction of the acceptor impurity background in GaAs grown by molecular beam epitaxy
3. Reduced carbon acceptor incorporation in GaAs grown by molecular beam epitaxy using dimer arsenic
4. Improved detection of carbon in GaAs by secondary ion mass spectroscopy: The influence of hydrocarbons in metalorganic vapor phase epitaxy
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