Improved detection of carbon in GaAs by secondary ion mass spectroscopy: The influence of hydrocarbons in metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99023
Reference13 articles.
1. Mechanism of carbon incorporation in MOCVD GaAs
2. Carbon, oxygen and silicon impurities in gallium arsenide
3. The incorporation and characterisation of acceptors in epitaxial GaAs
4. Imaging and analysis of carbon distribution in GaAs using radioactive tracer 14C
5. Ion implanted standards for secondary ion mass spectrometric determination of the Group IA-VIIA elements in semiconducting matrixes
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