Imaging and analysis of carbon distribution in GaAs using radioactive tracer 14C
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Spatially resolved photoluminescence using spectral correlation;Journal of Electronic Materials;1991-02
2. Defect Analysis on GaAs Crystals by Precision Measurements of Density and Lattice Parameter;physica status solidi (a);1990-11-16
3. Thermochemical analysis of native point defects and substitutional carbon and boron in GaAs crystal growth;Crystal Research and Technology;1990-06
4. Electrical inhomogeneity in Ga‐rich undoped GaAs crystals: Dependence on melt stoichiometry and dislocation distribution;Journal of Applied Physics;1990-05
5. Improved detection of carbon in GaAs by secondary ion mass spectroscopy: The influence of hydrocarbons in metalorganic vapor phase epitaxy;Applied Physics Letters;1988-05-16
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