Gallium desorption from (Al,Ga)As grown by molecular beam epitaxy at high temperatures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Molecular beam epitaxy of III–V compound semiconductors;Tsang,1985
2. Influence of Substrate Temperature on the Morphology of Al x Ga1 − x As Grown by Molecular Beam Epitaxy
3. Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures
4. Mass‐action control of AlGaAs and GaAs growth in molecular beam epitaxy
5. Thermodynamic aspects of molecular beam epitaxy: High temperature growth in the GaAs/Ga1−xAlxAs system
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