Comparative studies of clustering effect, electronic and optical properties for GePb and GeSn alloys with low Pb and Sn concentration-Reference-Cited by-同舟云学术

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Comparative studies of clustering effect, electronic and optical properties for GePb and GeSn alloys with low Pb and Sn concentration

Published:2014-06 Issue: Volume:443 Page:43-48
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Huang Wenqi,Cheng Buwen,Xue Chunlai,Li Chuanbo

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Advances in SiGeSn/Ge technology;Soref,2006

2. TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

3. Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy

4. Interband Transitions inSnxGe1−xAlloys

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1. The mole fraction effect on the elastic properties of the Ge(1-x)Snx alloys;Physica B: Condensed Matter;2024-07

2. Molecular beam epitaxy growth and characterization of GePb alloys;Journal of Vacuum Science & Technology B;2024-05-01

3. P–i–n photodetector with active GePb layer grown by sputtering epitaxy;Applied Physics Express;2024-04-01

4. Investigation of temperature and H₂ on GePb/Ge multiple quantum well growth;Journal of Physics D: Applied Physics;2024-03-21

5. Growth and characterization of GePb/Ge multiple quantum wells;Journal of Alloys and Compounds;2023-02

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