First principles calculations of La2O3/GaAs interface properties under biaxial strain and hydrostatic pressure-Reference-Cited by-同舟云学术

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First principles calculations of La2O3/GaAs interface properties under biaxial strain and hydrostatic pressure

Published:2017-04 Issue: Volume:510 Page:13-21
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Shi Li-Bin,Li Ming-Biao,Xiu Xiao-Ming,Liu Xu-Yang,Zhang Kai-Cheng,Li Chun-Ran,Dong Hai-Kuan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference68 articles.

1. Cramming More Components Onto Integrated Circuits

2. Band offsets of high K gate oxides on high mobility semiconductors

3. High permittivity material selection for design of optimum Hk VDMOS

4. Chemical trends of defects at HfO2:GaAs and Al2O3:GaAs/InAs/InP/GaSb interfaces

5. Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators

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1. Computing with DFT Band Offsets at Semiconductor Interfaces: A Comparison of Two Methods;Nanomaterials;2021-06-16

2. Mechanical and electrical properties of borophene and its band structure modulation via strain and electric fields: a first-principles study;Materials Research Express;2021-06-01

3. First principles investigation of nitrogenated holey graphene;Physica E: Low-dimensional Systems and Nanostructures;2018-04

4. Interface spacing, stability, band offsets, and electronic properties on a (001) SrHfO3/GaAs interface: First-principles calculations;Journal of Applied Physics;2018-01-14

5. First principles calculations of the interface properties of a-Al2O3/MoS2 and effects of biaxial strain;Journal of Applied Physics;2017-05-28

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