Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2191736
Reference11 articles.
1. Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric
2. Electrical characterization of germanium p-channel MOSFETs
3. High dielectric constant oxides
4. Energy band alignment at the (100)Ge/HfO2 interface
5. Interface traps and dangling-bond defects in (100)Ge∕HfO2
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