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Electrical Characterisation of electron beam exposure induced Defects in silicon

  • Published:2016-01 Issue: Volume:480 Page:206-208
  • ISSN:0921-4526
  • Container-title:Physica B: Condensed Matter
  • language:en
  • Short-container-title:Physica B: Condensed Matter

Author:

Danga Helga T.,Auret Francois D.,Coelho Sergio M.M.,Diale Mmantsae

Funder

National Research Foundation of South Africa

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical characterization of electron beam exposure induced defects in epitaxially grown n-type silicon;WOMEN IN PHYSICS: 6th IUPAP International Conference on Women in Physics;2019

2. Electrically active defects in p-type silicon after alpha-particle irradiation;Physica B: Condensed Matter;2018-04

3. Thermal stability of defects introduced by electron beam deposition in p-type silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-10

4. DLTS characterization of defects in GaN induced by electron beam exposure;Materials Science in Semiconductor Processing;2017-06

5. The fine structure of electron irradiation induced EL2-like defects inn-GaAs;Journal of Applied Physics;2016-04-14
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