Thermal stability of defects introduced by electron beam deposition in p-type silicon-Reference-Cited by-同舟云学术

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Thermal stability of defects introduced by electron beam deposition in p-type silicon

Published:2017-10 Issue: Volume:409 Page:46-49
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Danga H.T.,Auret F.D.,Tunhuma S.M.,Omotoso E.,Igumbor E.,Meyer W.E.

Funder

South African National Research Foundation

University of Pretoria

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. Point defect injection into silicon due to low‐temperature surface modifications

2. Defects in Semiconductors: Some Fatal, Some Vital

3. Electrical Characterisation of electron beam exposure induced Defects in silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Induced defect levels of P and Al vacancy-complexes in 4H-SiC: A hybrid functional study;Materials Science in Semiconductor Processing;2019-01

2. Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H–SiC;Journal of Physics: Condensed Matter;2018-04-16

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