Electrically active defects in p-type silicon after alpha-particle irradiation-Reference-Cited by-同舟云学术

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Electrically active defects in p-type silicon after alpha-particle irradiation

Published:2018-04 Issue: Volume:535 Page:99-101
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Danga Helga T.,Auret F. Danie,Tunhuma Shandirai M.,Omotoso Ezekiel,Igumbor Emmanuel,Meyer Walter E.

Funder

National Research Foundation

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Physics of Semiconductor Devices;Sze,2007

2. Electrical Characterisation of electron beam exposure induced Defects in silicon

3. CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics

4. Study of alpha‐radiation‐induced deep levels inp‐type silicon

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrically Active Defects Induced by α‐Particle Irradiation in p‐Type Si Surface Barrier Detector;physica status solidi (a);2021-07-08

2. The study of low temperature irradiation induced defects in p-Si using deep-level transient spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-03

3. Electronic transport in MoSe2 FETs modified by latent tracks created by swift heavy ion irradiation;Journal of Physics D: Applied Physics;2019-01-28

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