Structural, electronic and energetic properties of silicon carbon alloys
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference39 articles.
1. Effect of Alloying and Pressure on the Band Structure of Germanium and Silicon
2. Heterojunction bipolar transistors using Si-Ge alloys
3. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system
4. Metastable SiGeC formation by solid phase epitaxy
5. Synthesis of Si1−yCyalloys by molecular beam epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. FP-LMTO method to calculate the structural, thermodynamic and optoelectronic properties of SixGe1−xC alloys;Molecular Physics;2013-03-08
2. A theoretical investigation of the stability of crystalline silicon dicarbide;Computational Materials Science;2012-04
3. Lattice constant deviation from Vegard's law in GeSn alloys;Acta Physica Sinica;2012
4. Electronic structure of SnxGe1−x alloys for small Sn compositions: Unusual structural and electronic properties;Journal of Applied Physics;2010-03
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