Author:
Su Shao-Jian ,Cheng Bu-Wen ,Xue Chun-Lai ,Zhang Dong-Liang ,Zhang Guang-Ze ,Wang Qi-Ming ,
Abstract
Three layers of fully-strained Ge1-xSnx alloys with x=0.025, 0.052, and 0.078 from bottom to up are grown on a Si (001) substrate using a high-quality, strain-relaxed Ge thin film as buffer layer. Five relaxed Ge1-xSnx samples (x=0.005, 0.016, 0.044, 0.070, and 0.155) are grown directly on Si (001) substrates as well. The compositions and lattice constants of the Ge1-xSnx alloys are measured by Rutherford backscattering spectra, high-resolution X-ray diffractions, and X-ray reciprocal space mapping. The experimental results reveal a quite large positive deviation from Vegard's law with a bowing parameter b=0.211 Å.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference20 articles.
1. Roucka R, Mathews J, Beeler R T, Toll J, Kouvetakis J, Menendez J 2011 Appl. Phys. Lett. 98 061109
2. Mathews J, Roucka R, Xie J Q, Yu S Q, Menendez J, Kouvetakis J 2009 Appl. Phys. Lett. 95 133506
3. Su S J, Cheng B W, Xue C L, Wang W, Cao Q, Xue H Y, Hu W X, Zhang G Z, Zuo Y H, Wang Q M 2011 Opt. Express 19 6400
4. Han G Q, Su S J, Zhan C L, Zhou Q, Yang Y, Wang L X, Guo P F, Wang W, Wong C P, Shen Z X, Cheng B W, Yeo Y C 2011 IEEE International Electron Devices Meeting Washington, DC, USA, December 5-7, 2011 p402
5. He G, Atwater H A 1996 Appl. Phys. Lett. 68 664
Cited by
11 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献