Defect-induced polytype transformations in LPE grown SiC epilayers on (111) 3C-SiC seeds grown by VLS on 6H-SiC-Reference-Cited by-同舟云学术

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Defect-induced polytype transformations in LPE grown SiC epilayers on (111) 3C-SiC seeds grown by VLS on 6H-SiC

Published:2009-12 Issue:23-24 Volume:404 Page:4727-4730
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Marinova Maya,Zoulis Georgios,Robert Teddy,Mercier Frederic,Mantzari Alkioni,Galben Irina,Kim-Hak Olivier,Lorenzzi Jean,Juillaguet Sandrine,Chaussende Didier,Ferro Gabriel,Camassel Jean,Polychroniadis Efstathios K.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Nucleation of 3C–SiC on 6H–SiC from a liquid phase

2. Top Seeded Solution Growth of 3C-SiC Single Crystals

3. Growth of Cubic Silicon Carbide Crystals from Solution

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on three-dimensional critical nucleation on a planar substrate of 3C-SiC crystal;Journal of Crystal Growth;2023-06

2. Effect of Deposition Flux on Polytypic Competitive Growth of SiC Crystal by Kinetic Monte Carlo Method;physica status solidi (b);2022-11-09

3. Influence of silicon carbide on structural, optical and magnetic properties of Wollastonite/Fe2O3 nanocomposites;Ceramics International;2021-05

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