The hidden secrets of the E-center in Si and Ge-Reference-Cited by-同舟云学术

The hidden secrets of the E-center in Si and Ge

Published:2007-12 Issue: Volume:401-402 Page:85-90
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Larsen Arne Nylandsted,Mesli Abdelmadjid

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-ECenter

2. M. Schulz (Ed.), Semiconductors, Subvolume A2: Impurities and Defects in Group IV Elements, IV–IV and III–V compounds, Part α: Group IV elements, Landolt-Börnstein, Springer, Berlin Heidelberg, 2002, p. 170.

3. Influence of the nonequilibrium vacancies on the diffusion of phosphorus into silicon

4. Calculations of Electrical Levels of Deep Centers: Application to Au-H and Ag-H Defects in Silicon

5. ECenter in Silicon Has a Donor Level in the Band Gap

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