Calculations of Electrical Levels of Deep Centers: Application to Au-H and Ag-H Defects in Silicon
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.82.2111/fulltext
Reference34 articles.
1. Hydrogen passivation of gold-related deep levels in silicon
2. Electrical properties of deep silver- and iron-related centres in silicon
3. Passivation of shallow impurities in Si by annealing in H2at high temperature
4. Reaction kinetics of hydrogen-gold complexes in silicon
5. Electronic structure of copper, silver, and gold impurities in silicon
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