Large-area free-standing GaN substrate grown by hydride vapor phase epitaxy on epitaxial lateral overgrown GaN template
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. Fabrication and performance of GaN electronic devices
2. Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation
3. Photoluminescence study of excitons in homoepitaxial GaN
4. Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate
5. Growth and characterization of low defect GaN by hydride vapor phase epitaxy
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3. Remote epitaxy using graphene enables growth of stress-free GaN;Nanotechnology;2019-10-03
4. First observation of electronic trap levels in freestanding GaN crystals extracted from Si substrates by hydride vapour phase epitaxy;Scientific Reports;2019-05-09
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