Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN
Author:
Affiliation:
1. Graduate School of Electrical and Electronic Engineering, Chiba University, 1-30 Yayoicho, Inage-ku, Chiba 263-8522, Japan
2. Institute of Industrial Science, The University of Tokyo, Tokyo, 4-6-1 Komaba, Meguro-ku 153-8505, Japan
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0023112
Reference30 articles.
1. Electrical properties of Si-doped GaN prepared using pulsed sputtering
2. Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy
3. Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy
4. Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy
5. Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films
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