Interfacial potentials for Ag/GaN(0001) interfaces by inversion of adhesive energy
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference29 articles.
1. Au/GaN interface: Initial stages of formation and temperature-induced effects
2. Characterization of metal/GaN Schottky interfaces based on I–V–T characteristics
3. Atomic arrangement at the Au∕p-GaN interface in low-resistance contacts
4. Photoemission study on interfacial reaction of Ti/n-type GaN
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1. Ultra‐High and Fast Ultraviolet Response Photodetectors Based on Lateral Porous GaN/Ag Nanowires Composite Nanostructure;Advanced Optical Materials;2020-02-23
2. Effect of interfacial composition on Ag-based Ohmic contact of GaN-based vertical light emitting diodes;Journal of Applied Physics;2018-02-07
3. The fundamental surface science of wurtzite gallium nitride;Surface Science Reports;2017-09
4. The foundation and study of a new type of lattice inversion potential for Iridium;International Journal of Modern Physics B;2015-11-18
5. Interfacial potential approach for Ag/ZnO (0001) interfaces;Chinese Physics B;2014-11-28
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