Atomic arrangement at the Au∕p-GaN interface in low-resistance contacts
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1840105
Reference16 articles.
1. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
2. Characteristics of InGaN laser diodes in the pure blue region
3. Metal contacts to gallium nitride
4. Very low resistance multilayer Ohmic contact to n‐GaN
5. Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films
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